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Technology To Develop High Speed Electronics

Using this technology, Russian scientists can build new devices, which are as high speed as superconductor ones.

A new technology to make high speed electronics of the new generation has been developed by the Russian scientists. Igor Kazakov, one of the developers of the new technology and a laboratory head with the Physical Institute of the Russian Academy of Sciences said that the history of solid-state electronics goes back to 1947 when a transistor device was invented. "Since then, progress has been following the path of bigger compactness of devices in an integral circuit unit, which is achieved through making them ever smaller," he said. These days, devices are so small that they hardly reach several dozens of nanometers in size. At that point, an electron begins to behave as a wave, i.e. it could either skirt an obstacle or penetrate through it. 



Such behaviour from particles virtually cancels principles underlying the operation of devices like transistors or diodes.Going by this, the researchers employed new physical principles - the so-called resonance tunneling - when only electrons of a given energy may penetrate through the obstacle. The developers of this new technology from the research centre Quantum Devices and Nanotechnologies used this principle. They were lead by Yuri Kopayev and Alexander Gorbatsevich, members of the Russian Academy of Sciences. 

The new devices made by the researchers are as high speed as superconductor ones. Based on classical physical principles, such as transistors and diodes, with devices built of quantum principles, the researchers have made 3D integration of devices. Looking at the latest development, the researchers from the Physical Institute feel that Russian developments may dominate the global market of new-generation electronics.

Kazakov said that the latest technology gives a chance to Russia to regain its once lost position in the field of advanced hardware components development. 

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