Have you ever imagined a Flash Chip that can store up to 128-GigaBit of data but of size even less than our fingertip?
If you haven't then you must know that Intel and Micron Technology have launched what is claimed to be the world's first 20 nanometre (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced mass production of their 64Gb 20nm NAND. The new 20nm monolithic 128Gb device is said to be the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die.
It has been developed through Intel and Micron's joint-development venture, IM Flash Technologies (IMFT).
The 128Gb device provides twice the storage capacity and performance of the companies' existing 20nm 64Gb NAND device. It meets the ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s). With these features, the chip provides customers with a cost-effective solid-state storage solution for today's slim, sleek product designs.
"As portable devices get smaller and sleeker, and server demands increase, our customers look to Micron for innovative new storage technologies and system solutions that meet these challenges," said Glen Hawk, vice president of Micron's NAND Solutions Group. "Our collaboration with Intel continues to deliver leading NAND technologies and expertise that are critical to building those systems."
The companies revealed that their 20nm NAND uses a planar cell structure which allows individual memory cells to scale much smaller than before. It breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.
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